期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 117, 期 4, 页码 1705-1713出版社
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-014-8745-0
关键词
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资金
- Scientific User Facilities Division, Office of Basic Energy Sciences, US Department of Energy
- Austrian Cooperative Research (ACR)
- Graz University of Technology in Austria
- University of Tennessee Chancellor's Fellowship program
- National Defense Science and Engineering Graduate Fellowship through the AFOSR
- Intel Corporation at the Semiconductor Research Corporation [SRC-2012-In-2310]
- Office Of The Director
- EPSCoR [1004083] Funding Source: National Science Foundation
One critical area for the adoption of extreme ultraviolet (EUV) lithography is the development of appropriate mask repair strategies. To this end, we have explored focused electron beam-induced deposition of the ruthenium capping or protective layer. Electron beam-induced deposition (EBID) was used to deposit a ruthenium capping/protective film using the liquid bis(ethylcyclopentyldienyl) ruthenium(II) precursor. The carbon to ruthenium atomic ratio in the as-deposited material was estimated to be similar to 9/1. Subsequent to deposition, we demonstrate an electron stimulated purification process to remove carbon by-products from the deposit. Results indicate that high-fidelity nanoscale ruthenium repairs can be realized.
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