期刊
IEEE ELECTRON DEVICE LETTERS
卷 26, 期 2, 页码 118-120出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2004.841861
关键词
Ge-on-insulator (GOI); LaAlO3; metal-gate; MOSFET; three-dimensional (3-D)
We demonstrate three-dimensional (3-D) self-aligned [IrO2-IrO2-Hf]-LaAlO3-Ge-on-Insulator (GOI) CMOSFETs above 0.18-mum Si CMOSFETs for the first time. At an equivalent oxide thickness of 1.4 nm, the 3-D IrO2-LaAlO3-GOI p-MOSFETs and IrO2-Hf-LaAlO3-GOI nMOSFETs show high hole and electron mobilities of 234 and 357 cm(2)/Vs respectively, without depredating the underneath 0.18-mum Si devices. The hole mobility is 2.5 times higher than the universal mobility, at 1 MV/cm effective electric field. These promising results are due to the low-temperature GOI device process, which is well-matched to the low thermal budget requirements of 3-D integration. The high-performance GOI devices and simple 3-D integration process, compatible to current very large-scale integration (VLSI) technology, should be useful for future VLSI.
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