期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 102, 期 4, 页码 967-972出版社
SPRINGER
DOI: 10.1007/s00339-011-6278-3
关键词
-
资金
- Ministry of Knowledge Economy [10029953-2009-31]
- Ministry of Education, Science, and Technology [2009-0094040]
- National Research Foundation of Korea [2009-0094040] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/TiO2/Al resistive random access memory devices. As TiO2 deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/TiO2/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the TiO2 film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown TiO2 devices to the amorphous state with a low film density.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据