Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation

The Schottky barrier height (SBH) of NiSi on Si(100) was tuned in a controlled manner by the segregation of sulfur (S) to the silicide/silicon interface. S was implanted into silicon prior to silicidation. During subsequent Ni silicidation, the segregation of S at the NiSi/Si inter-face leads to the change of the SBH. The Sl3H of NiSi decreased gradually on n-Si(100) from 0.65 CV to 0.07 eV and increased correspondingly on p-Si(100). (C) 2005 American Institute of Physics.