期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 103, 期 4, 页码 1099-1103出版社
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-010-6048-7
关键词
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资金
- National Science Foundation of China [60776015]
- Special Funds for Major State Basic Research Project (973 program) of China [2006CB604907]
- 863 High Technology R&D Program of China [2007AA03Z402, 2007AA03Z451]
The valence-band offset of the wurtzite ZnO/rutile TiO2 heterojunction was directly determined by x-ray photoelectron spectroscopy. The wurtzite ZnO (0001) layer was grown on commercial rutile (101) TiO2 by metal-organic chemical-vapor deposition. The results show that the valence-band offset is 0.14 +/- 0.05 eV, which agrees well with previous results by other methods. Therefore, the conduction-band offset is deduced from their known band-gap energy values to be 0.45 +/- 0.05 eV, which indicates a type-II band alignment for the ZnO/TiO2 heterojunction.
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