期刊
JOURNAL OF CRYSTAL GROWTH
卷 275, 期 1-2, 页码 E1097-E1101出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2004.11.128
关键词
Kinetics; Plasma-enhanced chemical vapor deposition; Silicon carbide; Semiconductor silicon compounds
Films of a-SiC:H grown on Si single crystal (1 0 0) by plasma-enhanced chemical vapor deposition (PECVD) are analyzed by Fourier transform infrared (FTIR) spectroscopy. PECVD is performed using a single monomethylsilane (CH3SiCl3) source with hydrogen carrier gas. The hydrogen bond content of the films is determined from the FTIR spectra and compared with the carbon and silicon bond contents as an investigation of the growth process during the atom incorporation phase. The silicon bonding environment is also investigated based on the shift of the FTIR peak of Si-C and Si-H bonds. It is found that the hydrogen bonds of the films is proportional to the square of plasma power density, explainable as due to a combination of two one-step reactions producing non-emissive atomic hydrogen and SiH2. The shift of the SiHn (n = 1,2) peak reveals that the atoms nearest Si in the film are replaced by Si or H atom from C in CHn with increasing hydrogen content. A scheme for film growth in this system is then proposed based on the present and previous findings. (C) 2004 Elsevier B. V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据