Mn-AlInN: a new diluted magnetic semiconductor

Mn ions have been incorporated into MOCVD grown Al(1-x) In (x) N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at similar to 260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T (c) above room temperature is assumed to be associated to the layer having higher Mn concentration.