期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 94, 期 3, 页码 521-524出版社
SPRINGER
DOI: 10.1007/s00339-008-4962-8
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Long channel n-type metal oxide semiconductor field effect transistors on thin conventional and strained silicon on insulator substrates have been prepared by integrating gadolinium scandate as high-kappa gate dielectric in a gate last process. The GdScO(3) films were deposited by electron beam evaporation and subsequently annealed in oxygen atmosphere. Electrical characterization of readily processed devices reveals well behaved output and transfer characteristics with high I (on)/I (off) ratios of 10(6)-10(8), and steep inverse subthreshold slopes down to 66 mV/dec. Carrier mobilities of 155 cm(2)/Vs for the conventional and 366 cm(2)/Vs for the strained silicon substrates were determined.
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