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Polarization switching kinetics of epitaxial Pb(Zr0.4Ti0.6)O3 thin films -: art. no. 092905

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APPLIED PHYSICS LETTERS
卷 86, 期 9, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.1870126

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The polarization switching kinetics of epitaxial Pb(Zr0.4Ti0.6)O-3 thin films were investigated by measuring write pulse-width dependences of switched polarization Delta P(t) under various applied electric fields. It was found that Delta P(t) follows the predictions of the Kolmogorov-Avrami-Ishibashi model quite well. However, the detailed behaviors of Delta P(t) were different for low and high electric field regions, which separated out around 220 kV/cm. The coercive field also showed different frequency dependences depending on the region. These differences were attributed to changes in the polarization switching kinetics. A possible origin of the switching kinetics changes is also discussed. (C) 2005 American Institute of Physics.

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