期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 93, 期 2, 页码 409-414出版社
SPRINGER
DOI: 10.1007/s00339-008-4782-x
关键词
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资金
- National Research Program
- Korea Ministry of Commerce
- Industry and Energy
- Korea Science and Engineering Foundation (KOSEF)
- Brain Korea 21 (BK21) Project
Memory devices based on the reversible resistance switching of various materials are attractive for today's semiconductor technology. The reproducible current hysteresis (resistance switching) characteristics of reduced TiO2 single crystal are demonstrated. Basic models concerning the filamentary and Schottky barrier models are discussed. Good retention characteristics are exhibited by the accurate controlling of the annealing parameters.
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