期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 95, 期 1, 页码 43-48出版社
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-008-4995-z
关键词
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资金
- Austrian Science Fund FWF [P19959-N20]
- Austrian Nano-Initiative [0700]
- Integrated Organic Sensor and Optoelectronics Technologies-Research [0701]
- Austrian Science Fund (FWF) [P19959] Funding Source: Austrian Science Fund (FWF)
For the design and manufacture of complex integrated circuits, control over the threshold voltage of the transistors is essential. In the present contribution, we present a non-invasive method to tune the threshold voltage of organic thin-film transistors after device assembly over a wide range without any significant degradation of the device characteristics. This is realized by incorporating a thin, chemically reactive siloxane layer bonded to the gate oxide. This results in threshold voltages of around 70 V in the as-prepared devices. By exposing a transistor modified in this way to ammonia at different concentrations, the threshold voltage can be tuned in steps of only a few volts. This treatment affects only the charge density at the semiconductor-dielectric interface, leaving the overall shape of the transistor characteristics and the charge-carrier mobility largely unaltered.
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