4.6 Article

Interface-mediated pairing in field effect devices

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PHYSICAL REVIEW B
卷 71, 期 10, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.71.104510

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We consider the pairing induced in a strictly two-dimensional electron gas (2DEG) by a proximate insulating film with polarizable localized excitations. Within a model of interacting 2D electrons and localized two-level systems, we calculate the critical temperature T-c as a function of applied voltage and for different materials properties. Assuming that a sufficient carrier density can be induced in a field-gated device, we argue that superconductivity may be observable in such systems. T-c is found to be a nonmonotonic function of both electric field and the excitation energy of the two-level systems.

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