期刊
MATERIALS LETTERS
卷 59, 期 6, 页码 615-617出版社
ELSEVIER
DOI: 10.1016/j.matlet.2004.09.030
关键词
thin films; deposition; plasma; atomic layer growth; titanium nitride; electrode
The atomic layer deposition (ALD) of titanium nitride (TiN) films using tetrakis(dimethylamido)titanium and ammonia (NH3) with and without NH3-Ar-H-2 plasma posttreatment was evaluated. Based on the saturation mechanism, the growth rate with and without plasma treatment was saturated at 0.24 and 0.46 nm/cycle, respectively. Plasma-treated TiN films had nanocrystalline structures, and the root-meansquare thickness was 0.211 nm. Carbon impurities decreased from 12% without plasma treatment to 3% with plasma treatment. ALD TiN films formed using plasma posttreatment retained perfect step coverage on trenches with aspect ratios from 8 to 20. (C) 2004 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据