期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 20, 期 2, 页码 300-307出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2004.843013
关键词
bootstrap power supply; floating; high-side gate drive; MOS-gated power semiconductors; power module; transformerless
A self-boost charge pump topology is presented for a floating high-side gate drive power supply that features high voltage and current capabilities for use in integrated power electronic modules (IPEMs). The transformerless topology uses a small capacitor to transfer energy to the high-side switch from a single power supply referred to the negative rail. Unlike conventional bootstrap power supplies, no switching of the main phase-leg switches is required to provide power continuously to the high-side gate drive, even if the high-side switch is permanently on. Additional advantages include low parts-count and simple control requirements. A piecewise linear model of the self-boost charge pump is derived and the circuit's operating characteristics are analyzed. Simulation and experimental results are provided to verify the desired operation of the new charge pump circuit. Guidelines are provided to assist with circuit component selection in new applications.
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