Spin injection from the Heusler alloy CO2MnGe into Al0.1Ga0.9As/GaAs heterostructures -: art. no. 102107

Electrical spin injection from the Heusler alloy Co2MnGe into a p-i-n Al0.1Ga0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias, conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2MnGe decays more rapidly with increasing temperature. (c) 2005 American Institute of Physics.