期刊
ADVANCED MATERIALS
卷 17, 期 5, 页码 545-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200401266
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Semiconducting beta-SiC nanowires encapsulated in BN nanotubes are prepared using chemical vapor deposition (see Figure). An unusual feature-a gap of 10-15 nm in width between the inner wall of the BN tube and the SiC nanowire-allows various chemical and morphological modifications to be performed on the nanowires.
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