Controllable modification of SiC nanowires encapsulated in BN nanotubes

Semiconducting beta-SiC nanowires encapsulated in BN nanotubes are prepared using chemical vapor deposition (see Figure). An unusual feature-a gap of 10-15 nm in width between the inner wall of the BN tube and the SiC nanowire-allows various chemical and morphological modifications to be performed on the nanowires.