期刊
ADVANCED MATERIALS
卷 17, 期 5, 页码 590-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200400368
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Fully transparent thin-film transistors (TF-Fs) are produced at room temperature by radiofrequency magnetron sputtering. Measuring the drain current (I-DS) as a function of drain voltage (V-DS) at different gate voltages (V-GS) shows the TFTs possess hard saturation with on-currents of about 0.2 mA (see Figure) and saturation mobilities of 20 cm(2) V-1 s(-1). The optical and electrical properties and the compatibility of the fabrication process with low-cost plastic substrates show promise for invisible and flexible electronic circuits.
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