Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial In0.53Ga0.47As layers -: art. no. 111912

We use high-angle annular dark-field imaging in scanning transmission electron microscopy to investigate the crystal structure and particle morphology of semimetallic ErAs nanoparticles embedded in epitaxial In0.53Ga0.47As layers. Deposition of increasing amounts of Er results in a higher density of particles and particles coalescence for high amounts. Despite overlap with the matrix through the thickness of the sample used for transmission electron microscopy, the crystal structure of ErAs particles is unambiguously identified as rock salt. The As sublattice is continuous across the interface between the particle and the zinc-blende semiconductor. (C) 2005 American Institute of Physics.