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Magnetoelectric switching of exchange bias

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PHYSICAL REVIEW LETTERS
卷 94, 期 11, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.94.117203

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The perpendicular exchange bias field, H-EB, of the magnetoelectric heterostructure Cr2O3 (111)/ (Co/Pt)(3) changes sign after field cooling to below the Neel temperature of Cr2O3 in either parallel or antiparallel axial magnetic and electric freezing fields. The switching of H-EB is explained by magnetoelectrically induced antiferromagnetic single domains which extend to the interface, where the direction of their end spins controls the sign of H-EB. Novel applications in magnetoelectronic devices seem possible.

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