Selective metal electrodeposition through doping modulation of semiconductor surfaces

We demonstrate selective electrodeposition of magnetic layers on doped semiconductors resulting in a self-aligned pattern which replicates the doping pattern in the semiconductor surface. A Schottky barrier forms at the interface between a semiconductor substrate and the electrolyte, which upon application of a cathodic potential is biased in the forward (reverse) direction for n- or p-type semiconductors, respectively. Electron transfer from an n-type semiconductor is thus possible, while breakdown of the Schottky barrier would be necessary for deposition on a p-type substrate. The process will thus be spatially selective on a lateral modulation of the substrate doping. As an example we demonstrate the deposition of Co on GaAs. (C) 2005 American Institute of Physics.