期刊
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
卷 102, 期 13, 页码 4678-4682出版社
NATL ACAD SCIENCES
DOI: 10.1073/pnas.0501027102
关键词
gate insulator; molecular multilayer; organic dielectric; self-assembly
Very thin (2.3-5.5 nm) self -assembled organic dielectric multi layers have been integrated into organic thin-film transistor structures to achieve sub-1-V operating characteristics. These new dielectrics are fabricated by means of layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well defined, strongly adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (up to approximate to 2,500 nF center dot cm(-2)), excellent insulating properties (leakage current densities as low as 10(-9) A center dot cm(-2)), and single-layer dielectric constant (k) of approximate to 16. These 3D self-assembled multilayers enable organic thin-film transistor function at very low source-drain, gate, and threshold voltages (<1 V) and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.
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