期刊
ELECTRONICS LETTERS
卷 41, 期 7, 页码 444-446出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20057199
关键词
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Organic field-effect transistors incorporating the electron transport material C-60 as the active semiconductor have been fabricated under high vacuum conditions and tested in a nitrogen atmosphere at ambient pressure. The maximum field-effect mobility was found to be 0.65 cm(2)/Vs, comparable to the state-of-the-art value measured under ultra-high-vacuum conditions.
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