期刊
MRS BULLETIN
卷 30, 期 4, 页码 299-304出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrs2005.77
关键词
bipolar power devices; power rectifiers; power thyristors; power transistors; silicon carbide
The successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices. We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.
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