期刊
JOURNAL OF MATERIALS RESEARCH
卷 20, 期 4, 页码 779-782出版社
MATERIALS RESEARCH SOCIETY
DOI: 10.1557/JMR.2005.0105
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We have grown single-crystal thin films of Ti2GeC and T3GeC2 and a new phase Ti4GeC3, as well as two new intergrown MAX-structures, Ti5Ge2C3 and Ti7Ge2C5. Epitaxial films were grown on Al2O3(0001) substrates at 1000 degrees C using direct current magnetron sputtering. X-ray diffraction shows that Ti-Ge-C MAX-phases require higher deposition temperatures in a narrower window than their Ti-Si-C correspondences do, while there are similarities in phase distribution. Nanoindentation reveals a Young's modulus of 300 GPa, lower than that of Ti3SiC2. Four-point probe measurements yield resistivity values of 50-200 mu Omega cm. The lowest value is obtained for phase-pure T3GeC2(0001) films,
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