期刊
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
卷 80, 期 7, 页码 1405-1408出版社
SPRINGER
DOI: 10.1007/s00339-004-3188-7
关键词
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Silicon-silicon dioxide core-shell nanowires grown on gold-coated silicon wafers by thermal evaporation of silicon monoxide sometimes show an oscillation in diameter. The two possible causes for this behaviour are a self-oscillation process during the growth or the so-called Rayleigh instability. By analyzing the thickness distribution of the nanowires, we will show that a self-oscillation process is responsible for the periodic instability during growth. In contrast, during post-growth etching and oxidation the nanowires can develop Rayleigh instabilities, leading to silicon nanocrystals embedded in silicon dioxide nanowire.
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