期刊
ACTA MATERIALIA
卷 53, 期 7, 页码 1985-1994出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2005.01.010
关键词
molecular dynamics simulation; vanadium; interstitial; diffusion; dislocation loop
We study the diffusion of self-interstitial atoms (SIAs) and SIA clusters in vanadium via molecular dynamics simulations with an improved Finnis-Sinclair potential (fit to first-principles results for SIA structure and energetics). The present results demonstrate that single SIAs exist in a < 111 >-dumbbell configuration and migrate easily along < 111 > directions. Changes of direction through rotations into other < 111 > directions are infrequent at low temperatures, but become prominent at higher temperatures, thereby changing the migration path from predominantly one-dimensional to almost isotropically three-dimensional. SIA clusters (i.e., clusters of < 111 >-dumbbells) cart be described as perfect prismatic dislocation loops with Burgers vector and habit planes of 1/2 < 111 >{220} that migrate only along their glide cylinder. SIA clusters also migrate along < 111 >-directions, but do not rotate. Both single SIAs and their clusters exhibit a highly non-Arrhenius diffusivity, which originates from a combination of a temperature dependent correlation factor and the presence of very low migration barriers. At low temperature, the diffusion is approximately Arrhenius, while above room temperature, the diffusivity is a linear function of temperature. A simple model is proposed to describe these diffusion regimes and the transition between them. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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