MgxZn1-xO (0≤x<0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition -: art. no. 143113

MgxZn1-xO nanowires with Mg-content x from 0 to 0.2 have been grown by high-pressure pulsed-laser deposition (PLD) on gold-covered sapphire single crystals. The PLD process allows for a unique wide-range control of morphology, diameter, and composition of the MgxZn1-xO nanowires. The diameter of single ZnO wires could be varied between about 50 and 3000 nm, and the Mg content x of MgxZn1-xO wire arrays was controlled via the PLD gas pressure. The microscopic homogeneity of Mg content is displayed by cathodoluminescence (CL) imaging of the excitonic peak energy. The fluctuation of CL peak energy between individual wires is about an order of magnitude smaller than the alloy broadening. (C) 2005 American Institute of Physics.