Schottky diode with cutoff frequency of 400 GHz fabricated in 0.18 μm CMOS

TiSi2-Si Schottky diodes for RF rectification were fabricated using a 0.18 mu m CMOS process without any process modifications. These diodes are intended to be used with forward bias and small-signal amplitude. At 0 V bias, the diodes with an area of 0.45 x 0.45 mu m(2) achieve a cutoff frequency of over 400 GHz. This is the highest cutoff frequency compared to that for the previously reported Schottky diodes fabricated in foundry CMOS processes. The turn-on voltage of the diodes is similar to 0.30 V.