An impedance analysis method is introduced that enables the reliable determination of the doping concentration and the built-in potential of nonideal semiconductor p-n diodes featuring poor values for the shunt resistance, the series resistance, and/or the diode saturation current. The sample doping concentration on the lightly doped side of the p-n junction and the built-in potential are determined using the classic 1/C-2 vs V representation. The small-signal capacitance C for each reverse bias voltage V is directly extracted from the measured frequency dependence of the sample's impedance Z. A crucial feature of the method is the determination of the diode's series resistance and shunt resistance for each reverse bias voltage used. The method is verified using high-quality p-n junction diodes fabricated in silicon wafer substrates and its capabilities are demonstrated on nonideal p-n junction diodes fabricated in polycrystalline silicon thin films on glass substrates. (C) 2005 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据