期刊
ADVANCED MATERIALS
卷 17, 期 8, 页码 997-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200401285
关键词
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Direct inkjet printing of sub-100 nm nanoscale gaps, without the need for any high-resolution lithography, is made possible by a novel self-aligned printing method (see Figure). The benefits of this method are demonstrated by fabrication of all-polymer transistor circuits, which exhibit switching speeds at least two orders of magnitude higher than those previously reported for inkjet-printed polymer devices.
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