期刊
ELECTRONICS LETTERS
卷 41, 期 9, 页码 561-562出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20050807
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The bonding of InP/InGaAsP heterostructures dies onto an SOI substrate is reported. Bonding layer thicknesses down to 200 nm were reproducibly achieved. Bonding was achieved both on unprocessed SOI substrates as on processed SOI substrates containing high index contrast waveguides.
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