Metallization of the Ge(111) surface at high-temperature probed by energy-loss and Auger spectroscopies

We present new electron energy-loss spectroscopy (EELS) and Auger (AES) experiments aimed to study the structural transition of the Ge(111) surface taking place at high temperatures. Our advanced high-temperature set-up allowed us to collect accurate EELS spectra near the M-2,M-3 excitation edges and AES MMV and MVV spectra, corresponding to different probing depths ranging from 4 to 10 angstrom. The metallization of the surface has been clearly detected by the shift of the M-2,M-3 edge and of the MMV, MVV Auger energies. A detailed study of the transition has been perfonned using a fine temperature step under thermal equilibrium conditions. The AES and EELS experiments show that a sudden semiconductor-metal transition takes place at about 1000 K involving mainly the topmost layers. Deeper layers within 10 angstrom are also involved in the metallization process (in a range of 10 above 1010 K) and a smooth change in the topmost layers is also observed at higher temperatures up to 1070 K. These transitions are not fully reversible upon cooling (down to 870 K). Structural and electronic characteristics of the surface transition are discussed in light of available models. (c) 2005 Elsevier Ltd. All rights reserved.