A Promising Modified SILAR Sequence for the Synthesis of Photoelectrochemically Active Cu2ZnSnS4 (CZTS) Thin Films

A promising modified SILAR sequence approach has been employed for the synthesis of photoelectrochemically active Cu2ZnSnS4 (CZTS) thin films. To study the influence of sulfurization temperatures on the CZTS thin films, the CZTS precursor thin films were annealed at temperatures of 520, 540, 560, and 580 degrees C for 1h in an H2S (5%)+Ar (95%) atmosphere. These films were characterized for their structural, morphological, and optical properties using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, and UV-vis spectrophotometer techniques. The film sulfurized at an optimized temperature of 580 degrees C shows the formation of a prominent CZTS phase with a dense microstructure and optical band gap energy of 1.38eV. The photoelectrochemical (PEC) device fabricated using optimized CZTS thin films sulfurized at 580 degrees C exhibits an open circuit voltage (V-oc) of 0.38V and a short circuit current density (J(sc)) of 6.49mAcm(-2), with a power conversion efficiency () of 0.96%.