期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 202, 期 7, 页码 1193-1207出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200460900
关键词
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We review the use of the contactless methods of photoreflectance (PR), contactless electroreflectance (CER) and wavelength modulated differential surface photovoltage spectroscopy (DSPS) for the nondestructive, room temperature characterization of a wide variety of wafer-scale III-V semiconductor device structures. Some systems that will be discussed include heterojunction bipolar transistors (including the determination of the built-in fields/doping levels in the emitter and collector regions, alloy composition, and do current gain factor), pseudomorphic GaAlAs/InGaAs/GaAs high electron mobility transistors (including the determination of the composition, width, and two-dimensional electron gas density in the channel), InGaAsP/InP quantum well edge emitting lasers (including the detection of p-dopant interdiffusion), vertical-cavity surface-emitting lasers (determination of fundamental conduction to heavy-hole excitonic transition and cavity mode). (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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