4.5 Article

A broad-band MQW semiconductor optical amplifier with high saturation output power and low noise figure

期刊

IEEE PHOTONICS TECHNOLOGY LETTERS
卷 17, 期 5, 页码 974-976

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2005.845733

关键词

amplifier noise; gain measurement; quantum wells; semiconductor optical amplifiers (SOAs)

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A broad-band semiconductor optical amplifier (SOA) that achieves both a high chip saturation output power and a low chip noise figure (NF) was developed by using a thin multiquantum well with low internal loss. The SOA exhibited a high chip saturation output power of > +19.6 dBm and a low chip NF of < 4.5 dB over a 3-dB gain bandwidth of 120 nm (1450-1570 nm). For the amplification of optical signals modulated at 40-Gb/s non-return-to-zero format, a penalty-free amplification was confirmed up to an average chip output power of + 18.1 dBm.

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