期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 17, 期 5, 页码 974-976出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2005.845733
关键词
amplifier noise; gain measurement; quantum wells; semiconductor optical amplifiers (SOAs)
A broad-band semiconductor optical amplifier (SOA) that achieves both a high chip saturation output power and a low chip noise figure (NF) was developed by using a thin multiquantum well with low internal loss. The SOA exhibited a high chip saturation output power of > +19.6 dBm and a low chip NF of < 4.5 dB over a 3-dB gain bandwidth of 120 nm (1450-1570 nm). For the amplification of optical signals modulated at 40-Gb/s non-return-to-zero format, a penalty-free amplification was confirmed up to an average chip output power of + 18.1 dBm.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据