4.4 Article

Gas-phase ion chemistry in XH4-C3H4-ZH3 (X=Si, Ge; Z =N, P) mixtures

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JOURNAL OF MASS SPECTROMETRY
卷 40, 期 5, 页码 591-598

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WILEY
DOI: 10.1002/jms.825

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silane; germane; ion trap mass spectrometry; ion chemistry; semiconductor

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The gas-phase ion chemistry of silane-allene-ammonia, germane-allene (or propyne)-ammonia (or phosphine) systems was studied by ion trap mass spectrometry. Reaction sequences were determined and rate constants were measured for the main processes observed. The mixture containing silane displays higher reactivity with respect to that with germane. Comparison with analogous systems provides useful information about the reactivity of different hydrocarbon molecules and the different affinities of silicon and germanium towards nitrogen and phosphorus. The most interesting product ions observed are those containing Si (or Ge), C and N (or P) elements together, as these ion species may be considered precursors of doped amorphous carbides, which are widely used in semiconductor devices. Copyright (c) 2005 John Wiley & Sons, Ltd.

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