期刊
SOLID-STATE ELECTRONICS
卷 49, 期 5, 页码 716-720出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2004.09.003
关键词
charge trapping in Al2O3; nonvolatile memory; metal gate with high work function; read disturb
Charge trapping memory structures with Al2O3 dielectrics as a trapping dielectric are investigated in a metal-Al2O3-Oxide-silicon configuration with a metal gate of high work function. The devices show very good write/erase characteristics, endurance, retention and disturb behaviour. At elevated temperature, devices with an Al2O3 trapping layer are found to have better retention properties than devices with a silicon nitride trapping layer. (c) 2005 Elsevier Ltd. All rights reserved.
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