期刊
JOURNAL OF CRYSTAL GROWTH
卷 278, 期 1-4, 页码 229-233出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2004.12.060
关键词
defects; plasmas; molecular beam epitaxy; dilute nitrides; semiconducting gallium arsenide
Growth of GaInNAs by molecular beam epitaxy (MBE) generally requires a nitrogen plasma, which complicates growth and can damage the wafer surface. Optical spectra from both ends of the plasma cell were nearly identical, and were found to be insensitive to certain changes in the cell condition evidenced by a change in reflected RF power and stability. A slight amount of excess capacitance in the matching network improved stability, particularly while the cell warmed up. Furthermore, despite steps to reduce the ion flux from the plasma, a remote Langmuir probe showed significant ions. Moderate voltages on deflection plates were sufficient to remove these ions, with a 3-5x increase in photoluminescence resulting from 18-40V deflection. (c) 2005 Published by Elsevier B.V.
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