We have studied the influence of the growth conditions on the Si incorporation in AlN films grown by plasma-assisted molecular-beam epitaxy. Nitrogen-rich growth conditions allow controlled incorporation of Si up to a concentration of 5.2 x 10(21) cm(-3), determined by elastic recoil detection analysis, whereas Si incorporation is supressed under Al-rich growth conditions. The structural and morphological properties determined by x-ray diffraction and atomic force microscopy were not affected up to Si concentrations of 1.2 x 10(21) cm(-3). The electrical conductivity for the N-rich growth regime first increases with Si concentration followed by a decrease due to an increase of the activation energy up to 570 meV for a Si content of 1.2 x 10(21) cm(-3). For higher silicon concentrations, we have observed a sharp decrease in activation energy and an increase in conductivity by four orders of magnitude, attributed to the onset of impurity band conduction. (c) 2005 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据