期刊
JOURNAL OF PHYSICAL CHEMISTRY B
卷 109, 期 18, 页码 8538-8542出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp0509008
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We report a general synthetic method for the formation of shape-controlled CdS, CdSe and CdTe nanocrystals and mixed-semiconductor heterostructures. The crystal growth kinetics can be manipulated by changing the injection rate of the chalcogen precursor, allowing the particle shape-spherical or rodlike-to be tuned without changing the underlying chemistry. A single injection of precursor leads to isotropic spherical growth, whereas multiple injections promote epitaxial growth along the length of the c-axis. This method was extended to produce linear type I and type II semiconductor nanocrystal heterostructures.
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