A spin metal-oxide-semiconductor field-effect transistor (spin MOSIFET) with a ferromagnetic semiconductor for the channel

We propose and theoretically analyze a metal-oxide-semiconductor field-effect-transistor type of spin transistor (spin MOSFET) employing a ferromagnetic semiconductor (FS) for the channel. A ferromagnetic Schottky junction between the FS channel and a ferromagnetic metal (FM) is used for the source and drain. The output characteristics of the spin MOSFET depend on the relative magnetization configuration of the FS channel and FM source/drain. A large magnetocurrent ratio can be obtained and it is insensitive to the drain-source bias conditions, owing to the spin-filter effect of the FS/FM Schottky junction. Furthermore, excellent transistor performance, such as high transconductance and small subthreshold swing, is predicted. A new nonvolatile memory architecture using a single spin MOSFET cell is also presented, in which the programming current can be drastically reduced using the electrical manipulation of magnetization reversal of the FS channel. (c) 2005 American Institute of Physics.