4.6 Article

N-channel organic field-effect transistors using N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and a polymeric dielectric

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CHEMICAL PHYSICS LETTERS
卷 407, 期 1-3, 页码 95-99

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ELSEVIER SCIENCE BV
DOI: 10.1016/j.cplett.2005.03.079

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Organic field-effect transistors were fabricated using N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) as the active material and a polymeric insulator polymethylmethacrylate (PMMA) as the gate dielectric. A mobility value of 1.7 x 10(-2) cm(2) V-1 s(-1) was estimated from the transistor characteristics. The threshold voltage was 0.2 V and the inverse subthreshold slope was 7.6 V/decade. At low gate and high drain voltages, the device exhibits injection of holes from the Al drain electrode. This was rectified by using LiF as a buffer layer between Al and (PTCDI-C13H27). Such modified devices exhibited mobility 1.2 x 10(-2) cm(2) V-1 s(-1), threshold voltage -0.3 V, and inverse subthreshold swing of 5 V/decade. (c) 2005 Elsevier B.V. All rights reserved.

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