期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 38, 期 10A, 页码 A7-A10出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/38/10A/002
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The coherent x-ray diffraction (CXD) method is particularly attractive for understanding structures that can be represented as phase objects. Diffraction from a crystal acquires a phase whenever atoms are displaced from lattice sites, even by small fractions of an angstrom, so CXD measured around a Bragg peak is ideal for studying strain. We have succeeded in using these coherent beams to study the strain field arising from individual misfit dislocations located at an interface between a GeSi thin film and its Si(001) substrate. The data have not yet been inverted to images, but we show how the asymmetric CXD diffraction patterns can be explained qualitatively by a model phase structure.
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