Ultraviolet photovoltage characteristics of SrTiO3-δ/Si heterojunction -: art. no. 221917

A photovoltaic effect is observed in the heterostructure of p-Si/n-SrTiO3-delta (p: hole carrier type, n: electron carrier type). The current-voltage curve exhibits a good rectifying characteristic similar to that of the traditional diode. The junction shows the open circuit voltage of 126 mV/mJ, the short circuit current of 1.78 mA/mJ, and the response time faster than 10 ns for ultraviolet pulsed laser of 25 ns in duration at room temperature, suggesting the promising potential of this junction as a new type of ultrafast ultraviolet detectors with high sensitivity for application. (c) 2005 American Institute of Physics.