期刊
VACUUM
卷 78, 期 2-4, 页码 583-587出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2005.01.090
关键词
diamond; ion implantation; optical properties; spectroscopic ellipsometry; annealing; graphitization
Ellipsometric analysis of the buried graphitized layer formed in the He+-implanted and annealed diamond has been made. Spectroscopic ellipsometry data in the 360-1050 nm range at the incident angles between 65 degrees and 75 degrees were fitted based on a three-layer structure model. Using optical spectroscopy, atomic force and white-light interferometry microscopy data the n and k spectra of graphitized layer, its thickness and roughness were determined with high accuracy. (c) 2005 Elsevier Ltd. All rights reserved.
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