期刊
MICROELECTRONIC ENGINEERING
卷 80, 期 -, 页码 1-6出版社
ELSEVIER
DOI: 10.1016/j.mee.2005.04.035
关键词
nanotechnology; non-silicon; high-kappa dielectric; metal gate; high-mobility
High-kappa gate dielectrics and metal gate electrodes are required for enabling continued equivalent gate oxide thickness scaling, and hence high performance, and for controlling gate oxide leakage for both future silicon and emerging non-silicon nanoelectronic transistors. In addition, high-kappa gate dielectrics and metal gates are required for the successful demonstration of high performance logic transistors on high-mobility non-silicon substrates with high I-ON/I-OFF ratios.
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