3.8 Article

Organic thin-film transistors with high electron mobility based on perfluoropentacene

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JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.3663

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organic transistor; organic semiconductor; perfluoropentacene; pentacene; ambipolar transistor complementary circuit; OTFT; OFET; inverter

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We report on n-channel organic thin-film transistors (OTFTs) based on the novel n-type organic semiconductor, perfluoropentacene. The transistor exhibits excellent electrical characteristics, with a high electron mobility of 0.22 cm(2)/(Vs) and a good current on/off ratio of 10(5). The electron mobility is comparable to the hole mobility of a pentacene OTFT. By combining the n-type perfluoropentacene and the p-type pentacene, we have fabricated ambipolar OTFTs and complementary inverter circuits. The OTFTs with heterostructures of the p- and n-type organic semiconductors can operate as an ambipolar device with high electron and hole mobilities of 0.042 and 0.041 cm(2)/(Vs). The complementary inverter using an n-channel perfluoropentacene OTFT and a p-channel pentacene OTFT exhibits excellent transfer characteristics with a voltage gain of 45. A complementary inverter using the ambipolar OTFTs is also demonstrated.

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