期刊
NANOTECHNOLOGY
卷 16, 期 6, 页码 764-768出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/16/6/024
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Arsenic doping of ZnO nanowires for building blocks of potential nanoscale photonic devices is reported. It was demonstrated in high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy that arsenic could be doped into the substitutional sites in ZnO lattice by post-annealing samples grown on GaAs substrates without degradation of the crystalline and optical qualities. In a series of photoluminescence (PL) spectroscopy observations, arsenic-doped ZnO nanowires exhibited emission due to acceptor-bound excitons at room temperature. The observed emission characteristics implied that the dopant arsenic formed a hydrogen-like acceptor, suggesting the feasibility of producing possibly p-type ZnO nanowires via a simple route.
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