期刊
THIN SOLID FILMS
卷 480, 期 -, 页码 336-340出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2004.11.087
关键词
carrier mobilities; CIGS; high-frequency admittance measurements
We apply a new method to deduce the hole carrier mobilities of Cu(InGa)Se-2 (GIGS) polycrystalline films that have been incorporated into working solar cell devices. Our approach extends admittance measurements to frequencies of nearly 100 MHz in order to observe the characteristic dielectric carrier freeze-out and thus deduce the resistivity of the undepleted bulk absorber region in these devices. This resistivity, together with carrier densities deduced using drive-level capacitance profiling have allowed us to obtain the hole mobilities in the temperature regime 125 to 200 K. Values in the range 3-22 cm(2) V-1 s(-1) are obtained. In addition, we have examined the changes in mobility that occur as a result of light-soaking these devices, after which the carrier density is roughly doubled. Implications of these results toward understanding carrier mobility in CIGS polycrystalline films are discussed. (c) 2004 Published by Elsevier B.V.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据