VUV reflectance measurements and optical constants of SiC thin films

Optical constants of SiC thin films deposited with RF magnetron sputtering have been derived in the VUV. The films have been deposited with different parameters resulting in various C/Si ratios. Reflectance measurements have been made with a dedicated facility in the range 300-1300 angstrom. Index of refraction and absorption coefficient have been derived by fitting the reflectance data with the calculated ones. (c) 2005 Elsevier B.V. All rights reserved.